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Preparation of Thin Layers of Ferromagnetic Semiconductors
 Koštejn, Martin
The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
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Plný tet: SKMBT_C22015011914541 - Download fulltextPDF
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Preparation of Thin Layers of Ferromagnetic Semiconductors
 Koštejn, Martin
The paper reports on the experiments of preparation Mn diluted in Silicon. Si:Mn can be a material with the potential of room temperature ferromagnetism. Si:Mn have been prepared by pulsed laser deposition of Mn target under 20 Pa of silane by ArF laser. We estimate initial temperature 1 mm above surface as 1.9 eV. The prepared supersaturated layers contain 11% of manganese atoms, and they are formed by small particles. Diffraction images show no crystallization of Mn or Si, but there are signs of formation of silicides. The prepared material is amorphous or it contains only nanosized crystals below our limit of detection. Electron paramagnetic spectra show unbounded electrons which are needed for ferromagnetic properties. By annealing to 1100 ̊C changes in the crystallization and start of silicon and manganese separation were observed.
Fulltext: content.csg - Download fulltextPDF
Plný tet: SKMBT_C22015011914540 - Download fulltextPDF
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